fqpf47p06 / FQPF47P06YDTU thermal characteristics s ymb o l p aramet er fqpf47p06 / FQPF47P06YDTU unit v ds s drain-sou r ce v o lt age - 6 0 v i d drain cur r ent - co nt inuous (t c = 25c) -3 0 a - co nt inuous (t c = 100c) -21. 2 a i dm drain cur r ent - p u lsed ( n ote 1) -120 a v gs s g a t e -s ource v o l t age 25 v e as single p u lsed a v alanche ener gy ( n ote 2) 820 m j i ar a v alanche curr ent ( n ote 1) -3 0 a e ar repet it i v e avalanche ener gy ( n ote 1) 6. 2 m j dv/ d t p eak diode recover y d v / d t ( n ote 3) -7. 0 v / ns p d power dissipat ion (t c = 25 c) 62 w - de rat e above 25c 0 . 4 1 w / c t j , t st g o pe r at ing and s t or age t emperat ure range -55 t o +175 c t l maxim u m lead t e mper at ure f o r s o l d ering purp o ses, 1/ 8 " f r om c a se f o r 5 s e conds 300 c s ymbol parameter typ max unit r jc t her mal r e sist ance, junc t i on-t o -cas e - - 2 . 4 2 c / w r ja thermal resistance, junction-to-ambient -- 62.5 c / w ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! ? ?? ? ! !! ! ! !! ! ! !! ! s d g fqp f 47 p 06 / FQPF47P06YDTU p-channel mosfet this p-channel enhanc ement mode power mosfet is produced using fairchild semiconductor ? s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state res istance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, audio amplifier, dc motor control, and variable switc hing power applications. - 30 a, -60 v, r ds(on) = 26 m(max.) @v gs =-10 v, i d =- 15 a low g ate c harge ( typ. 84 nc) low crss ( typ. 320 pf ) 100% a valanche t ested marc h 201 3 p -channel qfet ? mosfet 175c maximum junction temperature rating -60 v, -30 a, 26 m ?2001 fairchild semiconductor corporation fqpf47p06 / FQPF47P06YDTU rev. c0 www.fairc hildsemi.com absolute ma ximum rat ings t c = 2 5c unl ess otherwise noted to -22 0 f g d s http://
e l eri cal c h ara c t e ris t ics t c = 2 5 c unl ess other w i s e note d n o tes: 1. r epeti t i v e r a ti ng : p ul s e w i d t h l i m i t ed by ma xi mum j uncti on tempe r atu r e 2. l = 1.06 mh , i as = - 3 0 a , v dd = -25 v , r g = 2 5 ?, s t ar ti ng t j = 2 5 c 3. i sd -47a , di/d t 300 a / s, v dd bv d ss, st a r t i n g t j = 2 5 c 4. p u l se t e st : p u lse width 300 s, duty cycle 2% 5. e sse nti a l l y indep ende nt of o pera t i ng tem per atur e s y m b ol pa r a m e t e r t e s t c o ndi t i on s m i n t y p m a x unit o f f ch a r ac t e rist ic s bv ds s drain-s ource br eakdown v o l t age v gs = 0 v , i d = -250 a -6 0 - - - - v ? bv ds s / ? t j br eakdown v o l t age t e mpe r at ur e coef f i cient i d = - 250 a, ref e renced t o 25 c -- - 0 . 0 6 - - v / c i ds s z e ro g a t e v o lt age dr ai n curre nt v ds = - 6 0 v , v gs = 0 v - - -- -1 a v ds = - 4 8 v , t c = 150c - - -- -10 a i gs sf g a t e - b ody leakage curr ent , f o rwar d v gs = -25 v , v ds = 0 v - - -- -100 na i gs sr g a t e - b ody leakage curr ent , rev e rse v gs = 25 v , v ds = 0 v - - -- 100 na o n ch ara ct eri st ics v gs ( t h ) g at e t hreshold v olt age v ds = v gs , i d = - 250 a -2. 0 -- -4. 0 v r ds ( o n ) st at ic drain-s ource o n -resis t anc e v gs = -10 v , i d = -15 a - - 0. 021 0. 026 ? g fs f o rward t r ans conduct ance v ds = - 3 0 v , i d = -15 a -- 1 9 - - s dyn a mi c ch ar act er ist ic s c is s i n p u t capacit ance v ds = - 2 5 v , v gs = 0 v , f = 1. 0 m hz - - 2800 3600 pf c os s o ut put c apacit anc e - - 1300 1700 pf c rs s rever se t r ansf e r capacit ance - - 320 420 pf sw it ch in g ch a r ac t e ris t ic s t d(o n ) t u rn- o n delay t i me v dd = -30 v , i d = -23. 5 a , r g = 25 ? -- 5 0 1 1 0 n s t r t u rn- o n rise t i me - - 450 910 ns t d(o f f) t u r n - off d e l a y t i m e - - 1 0 0 2 1 0 n s t f t u r n - off f a ll t i m e - - 1 9 5 4 0 0 n s q g t o ta l ga te ch a r g e v ds = - 4 8 v , i d = -47 a, v gs = -10 v -- 8 4 1 1 0 n c q gs g a t e - s ourc e char ge - - 18 -- nc q gd g a t e - d rain char ge - - 44 -- nc d r ai n - so u r c e d i o d e ch ar ac t e r i st ic s an d m a xi m u m ra t i n g s i s max i mum cont inuous drain-s ource diode f o rwar d curr ent - - - - - 30 a i sm max i mum p u l s ed dr ain-sourc e diode f o rward current - - -- -120 a v sd drain-s ource diode f o rw ard v o lt a g e v gs = 0 v , i s = -30 a - - -- -4. 0 v t rr r e ver se r e cover y t i m e v gs = 0 v , i s = -47 a, di f / dt = 100 a/ s - - 130 -- ns q rr rever se recover y c harge - - 0. 55 -- c (n ote 4) ( n o t e 4, 5) ( n o t e 4, 5) (n ote 4) fqpf47p06 / FQPF47P06YDTU p-channel mosfet ?2001 fairchild semic onductor corporation fqpf47p06 / FQPF47P06YDTU rev. c0 www.fairc hi ldsemi.com
0 102030405060708090 0 2 4 6 8 10 12 v ds = -30v v ds = -48v n o te : i d = - 47 a -v gs , gate-source voltage [v] q g , t o ta l g a t e c h a r g e [n c ] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 7000 8000 c is s = c gs + c gd (c ds = s h o r te d ) c os s = c ds + c gd c rss = c gd no t e s : 1 . v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , d r ai n- s our c e v ol t ag e [ v ] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 10 -1 10 0 10 1 10 2 175 no t e s : 1 . v gs = 0 v 2. 250 s pulse test 25 -i dr , reverse drain current [a] -v sd , s our c e- d r ai n v ol t ag e [ v ] 0 100 200 300 400 0. 00 0. 02 0. 04 0. 06 0. 08 0. 10 note : t j = 25 v gs = - 20v v gs = - 10v r ds(on) [ ? ], drain-source on-resistance -i d , d r a i n c u rr e n t [a ] 24 68 1 0 10 -1 10 0 10 1 10 2 175 25 -55 n o te s : 1 . v ds = - 30v 2. 250 s p u l se t e s t -i d , drain current [a] -v gs , g at e- s ou r c e v o l t ag e [ v ] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs t o p : - 1 5 . 0 v - 1 0 . 0 v - 8 . 0 v - 7 . 0 v - 6 . 0 v - 5 . 5 v - 5 . 0 v b ot t om : - 4. 5 v n o te s : 1. 25 0 s p ul s e t es t 2 . t c = 25 -i d , drain current [a] -v ds , d r ai n- s ou r c e v o l t ag e [ v ] ty pica l c h ara c t e ri st ics fi gur e 5. c ap aci t anc e c h a r ac t e ri st i cs f i g ure 6. g a t e c h arg e c h a r a ct eri s t i cs fi gu r e 3. o n - r es i s t a n c e v a r i a t i o n vs . dr ain cur r e nt a nd ga t e v o l t age figur e 4 . bod y di o d e fo r w a r d v o lt age v a r i at i o n v s . sour ce c u rr en t an d t e mp er at ur e f i g u r e 2 . t r a n sf er c h ar ac t e ri st i c s fi gur e 1. o n - r egi o n c h ar act er i s t i c s fqpf47p06 / FQPF47P06YDTU p-channel mosfet ?2001 fairchild semic onductor corporation fqpf47p06 / FQPF47P06YDTU rev. c0 www.fairc hildsemi.com
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n o te s : 1 . z jc ( t ) = 2. 42 /w m a x . 2 . d u ty f a c t o r , d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0. 0 1 z jc (t), therm al response t 1 , s q u a r e w a v e p u l s e d u r a ti o n [s e c ] 25 50 75 10 0 12 5 15 0 17 5 0 5 10 15 20 25 30 -i d , drain current [a] t c , c a s e te m per a t ur e [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100 ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) no t e s : 1 . t c = 2 5 o c 2 . t j = 17 5 o c 3. s i ngl e p ul s e -i d , drain current [a] -v ds , d r ai n- s our c e v ol t age [ v ] -100 -50 0 50 100 150 200 0. 0 0. 5 1. 0 1. 5 2. 0 2. 5 no t e s : 1 . v gs = - 10 v 2 . i d = - 23. 5 a r ds(on) , (normalized) drain-source on-resistance t j , ju nc t i o n temper a t ur e [ o c] -100 -50 0 50 100 150 200 0. 8 0. 9 1. 0 1. 1 1. 2 no t e s : 1 . v gs = 0 v 2 . i d = - 2 5 0 a -bv dss , (normalized) drain-source breakdown voltage t j , j un c t i on tem pe r at ur e [ o c] ty pica l c h ara c t e ri st ics (c onti nu ed) f i g u re 9 . max i mu m s a fe op er at in g are a f i g u re 1 0 . ma xi mu m dra i n cu rr en t v s . c a se t e mp er at u r e f i g u re 7. b r ea kdo w n v o l t a g e v a ri at i o n vs . t e mp er a t u r e f i g u r e 8 . on - r e s is ta nc e v a r i a t i o n v s . t e m p er at ur e f i g u r e 1 1 . t r ans i ent t h er m a l res pons e cur v e t 1 p dm t 2 fqpf47p06 / FQPF47P06YDTU p-channel mosfet ?2001 fairchild semiconductor corporation fqpf47p06 / FQPF47P06YDTU rev. c0 www.fairc hildsemi.com
charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut ch a r g e v gs -10v q g q gs q gd -3ma v gs dut v ds 300 nf 50 k 200nf 12 v sam e ty pe a s dut v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs v ds v gs 10% 90% t d(on) t r t on t of f t d( of f ) t f v dd -10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 --- --- --- --- --- --- -- bv ds s -v dd bv ds s v dd v ds bv ds s t p v dd i as v ds (t) i d (t) ti m e -10v dut r g l i d t p e as =li as 2 --- - 2 1 e as =l i as 2 --- - 2 1 --- - 2 1 --- --- --- --- --- --- -- bv ds s -v dd bv ds s v dd v ds bv ds s t p v dd i as v ds (t) i d (t) ti m e -10v dut r g l l i d i d t p g a t e c h ar ge t e st c i r c ui t & w a vef or m r e si st i v e s w i t ch i n g t e st c i r cu i t & w a ve f o r m s u n c l a m ped i n d u ct i ve sw i t chi n g t e st c i r c ui t & w a vef or m s fqpf47p06 / FQPF47P06YDTU p-channel mosfet ?2001 fairchild semic onductor corporation fqpf47p06 / FQPF47P06YDTU rev. c0 www.fairc hildsemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ dri v e r r g c o mp l i me nt o f d u t ( n - c han nel ) v gs ? d v / dt co nt rol l e d b y r g ?i sd c on t r o l l e d by p ul s e pe r i od v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ dri v e r r g c o mp l i me nt o f du t ( n - c han nel ) v gs ? d v / dt co nt rol l e d b y r g ?i sd c on t r o l l e d by p ul s e pe r i od v dd l l i sd 10 v v gs ( d r i ver ) i sd ( dut ) v ds ( dut ) v dd b o dy di od e f o r w a r d v ol t ag e d r op v sd i fm , b o dy di od e forw ard curren t b o dy di od e r ever s e c ur r en t i rm b o dy di od e r ec over y d v / d t di / dt d = ga t e p u l s e w i d t h ga t e p u l s e p eri od ---- -------- -------- ------ d = ga t e p u l s e w i d t h ga t e p u l s e p eri od ---- -------- -------- ------ fqpf47p06 / FQPF47P06YDTU p-channel mosfet ?2001 fairchild semic onductor corporation fqpf47p06 / FQPF47P06YDTU rev. c0 www.fairc hi ldsemi.c o m
fqpf47p06 / FQPF47P06YDTU p-channel mosfet ?2001 fairchild semiconductor corporation fqpf47p06 / FQPF47P06YDTU rev. c0 www.fairc hildsemi.com mechanical d imensions dimensions in millimeters to-220 f
fqpf47p06 / FQPF47P06YDTU p-channel mosfet ?2001 fairchild semiconductor corporation fqpf47p06 / FQPF47P06YDTU rev. c0 www.fairc hildsemi.com mechanical d imensions dimensions in millimeters to-220 f (y-forming)
fqpf47p06 / FQPF47P06YDTU p-channel mosfet ?20 0 1 fairchild semiconductor corporation fqp f 47p 0 6 ff406 rev. c0 www.fairc hi ldsemi.c o m tr ade ma rks the follo w i ng in clu des re giste r ed a nd un registere d tradema r ks a nd ser v ice marks, own ed by fai r ch ild s e micond uctor and/or its gl obal su bsidiar i es, a nd is n o t intende d to be an exha ustive list o f all such tra demar ks. *trademarks of system general corporation, used under license by fairchild semiconductor. dis c laimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. li fe suppo rt po licy fair child?s products ar e not au thor ized fo r u s e as cri tical c o mponent s i n li fe support devices or systems wi thout the express writt e n approval of fai rchild semiconduct or corporation. as u s e d here in: 1. l i fe sup port devices o r systems a r e devices or systems whi c h , (a) a r e i nte nded for surgi c al imp lant i nto the bo dy or (b ) sup port or su stain li fe, a nd (c) wh ose fail ure to p e rform when prop erly used in acco rdan ce with i n stru ction s for use p r ovide d i n the lab e ling , can be reason ably ex pe ct ed to r e su l t i n a s i gn ificant in jury of the user. 2. a critical compo nent in any com pon ent of a li fe su pport, device, or system wh ose fail ure to p e rform can be reason ably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool ? accupower? ax- ca p ? * bit s ic? buil d i t now? coreplus? corepower? cross volt ? ct l ? curre nt tran sfer log ic? deuxpe ed ? dual cool? ecosp a rk ? ef ficen t ma x? esb c? fairchild ? fairchild s emicondu ctor ? fact quiet serie s ? fact ? fast ? fast vcore? fetben c h ? fps? f- pf s? frfet ? g lobal po wer resource sm g reen br idge? g r een fps ? g r een fps ? e-se ries? g max ? gto? intellima x ? is o p la nar ? mar k i ng small s peaker s s ound l ouder an d bette r? megabuck? microcoupl e r? micro f e t ? micro p ak? micro p ak2? mill erdrive? motion max? mws a ver? op t o hi t? op to l o g i c ? o p topl anar ? p o w e rt re n c h ? power xs? prog rammab le active droo p? qfet ? qs? quie t ser i es? rapidco nfi gure? saving ou r w o rld, 1 m w/w/kw a t a ti m e ? sign alwise? smartmax? smart start? soluti ons for your success ? spm ? steal th? supe rfet ? supe rso t ? -3 supe rso t ? -6 supe rso t ? -8 supr emos ? syncfet? sync-l ock? ?* tinybo ost? tinybu c k ? tinycalc? tinylog ic ? ti nyopto? tinypo w e r? tinypwm? tinywire ? tran sic ? trifaul t detect? truecurrent ? * ser d es? uhc ? ultra fr fet ? unifet? vcx ? visualmax? vo lta geplu s ? xs ? ? ? dat asheet identifi c a tion pr oduct s t atus defini t i on a d va nc e in fo r m a t i o n f o r mat i ve / in design dat a she e t cont ains the d e sign specifica t io ns for pro duct deve lopmen t. s p ecifi c a t io ns may cha nge in any manne r w i tho u t no tice. pre limina r y f ir s t prod uctio n dat a she e t cont ains preli m inary dat a ; suppl ement a r y d a t a will be pub lished at a la te r date. fai r child semi co nductor reserves th e r i ght to make chang es at any time without notice to impr ove design. no iden tification need ed full pr oduction dat a she e t cont ains fin a l sp ecification s . fair child s emicondu ctor re se rves the righ t to make ch ange s at a n y time without n otice to impro v e the desig n. obs o l e te n o t i n p r odu ct ion dat a she e t cont ains sp ecifi c ation s on a pr oduct that is discontinu ed by fai r child semicon ductor . t h e dat a s h eet is fo r r efe rence informa t io n only . anti-counterfeiting policy fai r child semi co nductor corpo r ation?s anti-c o unterfeiting po licy. f a irchild ?s an ti- c ount erfeiting p o licy is also sta t ed o n o u r exte rnal web s ite, www.f a irchild s e mi. c om, under s a les supp ort . cou nterfeiting of se mico nductor par ts is a g r owing p r oble m i n the i ndustry. all ma nuf actur e s o f semicond uctor p r odu cts are expe r iencing cou n te rfeiting of the ir p arts. cu stomer s who inadv er ten t ly purcha s e counterfeit parts exper ience many p roble m s su ch as loss of br and repu tation , su bsta ndard pe rfo r mance, faile d a pplication , and incre ased co st o f pro ducti on and manufacturin g d elays. fairchil d is ta ki n g stron g me asures to pro t ect o u rselve s a nd our custo m ers from th e p r olifera t io n of cou nte rfe it parts. fairchild str ongly encoura ges customers to purchase fairchild par ts e i th er d i rectly fr om fa ir c h ild o r from a u thorized fairchi l d distribu tor s wh o are l isted by co untry on ou r web pa ge cited abo ve . p rodu ct s cu stomer s b uy either from fai rch ild di rectl y o r fr om author ized fairchi ld distribu tor s are g enui ne pa rts, ha ve fu ll traceab ility, mee t f a irchild? 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